september 2011 doc id 11740 rev 2 1/7 7 emif02-spk01f2 2-line ipad?, emi filter and esd protection features emi symmetrical (i /o) low-pass filter high efficiency in emi filtering very low pcb space consuming: 1.07 mm x 1.47 mm very thin package: 0.65 mm high efficiency in esd suppression high reliability offered by monolithic integration high reducing of parasitic elements through integration and wafer level packaging complies with the following standards: iec 61000-4-2 level 4, on output pins: ? 15 kv (air discharge) ? 8 kv (contact discharge) iec 61000-4-2 level 1, on input pins: ? 2 kv (air discharge) ? 2 kv (contact discharge) mil std 883e - method 3015-6 class 3 applications where emi filtering in es d sensitive equipment is required: mobile phones and communication systems computers, printers and mcu boards description the emif02-spk01 is a high ly integrated device designed to suppress emi/rfi noise in all systems subjected to electromagnetic interferences. the emif02 flip-chip packaging means the package size is equal to the die size. this filter includes an esd protection circuitry which prevents damage to the application when subjected to esd surges up 15 kv. figure 1. pin configuration (bump side) figure 2. basic cell configuration tm : ipad is a trademark of stmicroelectronics. flip-chip package (5 bumps) b 1 32 c a i1 gnd i2 o2 o1 input output gnd gnd gnd low-pass filter ri/o = 10 cline = 200 pf www.st.com
electrical characteristics emif02-spk01f2 2/7 doc id 11740 rev 2 1 electrical characteristics figure 3. electrical characteristics (definitions) table 1. absolute maximum ratings (t amb = 25 c) symbol parameter value unit t j maximum junction temperature 125 c t op operating temperature range -40 to +85 c t stg storage temperature range -55 to +150 c table 2. electrical characteristics (tamb = 25 c) symbol test condition min. typ. max. unit v br i r = 1 ma 6 8 v i rm v rm = 3 v per line 500 na r i/o tolerance 20% 10 c line v r = 0 v 200 pf i v i pp i pp v cl v cl v br v br v rm v rm i r i r i rm i rm i rm i rm i r i r i pp i pp v rm v rm v br v br v cl v cl symbol parameter v = breakdown voltage i = leakage current @ v v = stand-off voltage v = clamping voltage i = peak pulse current i = breakdown current v = forward voltage drop br rm rm rm cl pp r f c = line capacitance line r = dynamic impedance d
emif02-spk01f2 electrical characteristics doc id 11740 rev 2 3/7 figure 8. line capacitance versus applied voltage figure 4. s21 (db) attenuation measurements and aplac simulation figure 5. analog crosstalk measurements 100.0k 1.0m 10.0m 100.0m 1.0g -40.00 -35.00 -30.00 -25.00 -20.00 -15.00 -10.00 -5.00 0.00 db f/hz 1.0m - - - - - - 100.0k 1.0m 10.0m 100.0m 1.0g -60.00 -50.00 -40.00 -30.00 -20.00 -10.00 0.00 db f/hz - - - - - - figure 6. esd response to iec 61000-4-2 (+15kv air discharge) on one input v (in) and one output v (out) figure 7. esd response to iec 61000-4-2 (?15kv air discharge) on one input v (in) and one output v (out) c(pf) 0 50 100 150 200 250 012345 v (v) r f=1mhz v osc =30mv rms t j =25c
electrical characteristics emif02-spk01f2 4/7 doc id 11740 rev 2 figure 9. aplac mode figure 10. aplac parameters model = d1 model = d2 model = d2 in1 model = d1 out1 rbump lbump lbump rbump rspk lspk rbump lbump lbump rbump rspk lspk model = d3 in2 out2 gnd lsub rsub rbump lbump lgnd rgnd cgnd gnd emif02-spk01f1 model ground return aplacvar ls 1nh aplacvar rs 150m aplacvar rspk 10 aplacvar lspk 10p aplacvar cdiode1 234pf aplacvar cdiode2 3.5ppf aplacvar cdiode3 1nf aplacvar lbump 50ph aplacvar rbump 10m aplacvar rsub 0.5m aplacvar lsub 10ph aplacvar rgnd 1m aplacvar lgnd 50ph aplacvar cgnd 0.15pf model d1 cjo=cdiode1 bv=7 ibv=1u ikf=1000 is=10f isr=100p n=1 m=0.3333 rs=0.7 vj=0.6 tt=50n model d2 cjo=cdiode2 bv=7 ibv=1u ikf=1000 is=10f isr=100p n=1 m=0.3333 rs=0.3 vj=0.6 tt=50n model d3 cjo=cdiode3 bv=7 ibv=1u ikf=1000 is=10f isr=100p n=1 m=0.3333 rs=0.12 vj=0.6 tt=50n
emif02-spk01f2 ordering information doc id 11740 rev 2 5/7 2 ordering information figure 11. ordering information scheme 3 packaging information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. figure 12. flip-chip dimensions emif yy - xxx zz fx emi filter number of lines information package x = resistance value (ohms) z = capacitance value / 10(pf) or 3 letters = application 2 digits = version f = flip-chip x = 1: 500m, bump = 315m = 2: leadfree pitch = 500m, bump = 315m figure 13. footprint figure 14. marking 1.07 mm 50m 1.47 mm 50m 435 m 500 m 15 315 m 50 500 m 10 250 m 10 650 m 50 copper pad diameter : 250 m recommended, 300 m max solder stencil opening: 330m solder mask opening recommendation: 340 m min for 315 m copper pad diameter dot, st logo xx = marking yww = datecode (y = year ww = week) z = manufacturing location x y x w z w e
ordering information emif02-spk01f2 6/7 doc id 11740 rev 2 figure 15. packing 4 ordering information note: more packing information is av ailable in the applications note: an1235: ?flip-chip: package description and recommendations for use? an 1751: ?emi filters: recomendations and measurements? 5 revision history dot identifying pin a1 location user direction of unreeling all dimensions in mm 4 0.1 8 0.3 4 0.1 1.75 0.1 3.5 0.1 ? 1.5 0.1 0.73 0.05 xxz yww st xxz yww st xxz yww st e e e table 3. ordering information order code marking package weight base qty delivery mode emif02-spk01f2 fx flip chip 2.1 mg 5000 tape and reel (7?) table 4. document revision history date revision changes 14-oct-2006 1 initial release. 08-sep-2011 2 updated figure 12 and figure 13.
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